Re: No current in NEGF calculation ( No.1 ) |
- Date: 2017/04/11 15:21
- Name: Fronquer
- Dear Guo,
As I can observe from your input file, I think you forget the following tags to add in your NEGF file
NEGF.tran.Analysis on
NEGF.tran.CurrentDensity on
NEGF.tran.Channel on
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Re: No current in NEGF calculation ( No.2 ) |
- Date: 2017/04/11 18:24
- Name: Bill Guo
- Incredible. It's always the tiny things. Thanks so much Fronquer! Hopefully there are no other issues.
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Re: No current in NEGF calculation ( No.3 ) |
- Date: 2017/04/12 07:18
- Name: Bill Guo
- Actually those settings default to on, if I'm not mistaken? I get the same results with those lines. Still 0 current.
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Re: No current in NEGF calculation ( No.4 ) |
- Date: 2017/04/12 18:26
- Name: T. Ozaki
- Hi,
Did you check the transmission and confirm that the source-drain bias window overlaps with the energy range of non-zero transmission? Also, I've noticed that you applied a very large gate voltage for such a narrow region, and been wondering that this may cause an unphysical charge transfer between C0 and L0(R0) regions, resulting in a physically unacceptable result.
Regards,
TO
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Re: No current in NEGF calculation ( No.5 ) |
- Date: 2017/04/12 18:42
- Name: Artem Pulkin
- Yep, 16 Volts per less than nm is unphyscial. Even for larger scattering regions, it does not make sense to probe valence or conduction states that are 16 eV away from the Fermi level: this value is much larger than the vacuum level in MoS2.
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Re: No current in NEGF calculation ( No.6 ) |
- Date: 2017/04/19 16:25
- Name: Bill Guo
- Hi Dr. Ozaki and Dr. Pulkin,
Thanks for your input. I have tried using 4V gate voltage and source-drain voltage of 2 and 3V, which should overlap with the non-zero transmission range. But nevertheless in every scenario I see no current, which seems bizarre. Which leads me to think that there is something else wrong with my parameter specifications, besides the voltages?
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Re: No current in NEGF calculation ( No.7 ) |
- Date: 2017/04/20 13:20
- Name: T. Ozaki
- Hi,
It would be better to check one by one. Could you check the transmission and DOS of NbS2 bulk and MoS2 bulk, respectively? Then, could you check PDOS of NbS2 and MoS2 in the device configuration under zero bias voltage for both gate and source-drain if the PDOS in the device resembles the bulk couterpart? If this is what you expect, you can apply bias voltage to see how the PDOS and transmission are altered under finite voltages.
Regards,
TO
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